abstract |
An organometallic compound having a low melting point, excellent vaporizationncharacteristic and low film formation temperature on a substrate, for forming anniridium-containing thin film by the CVD process is provided. The organometallicniridium compound is represented by the following general formula (1) or (2):n n nwherein R 1 represents hydrogen or a lower alkyl group; R 2 to R 7 each representsnhydrogen, a halogen, or the like, provided that specific combinations of R 1 to R 7 arenexcluded; R 8 represents a lower alkyl group; R 9 to R 12 each represents hydrogen, anhalogen, or the like, provided that specific combinations of R 8 to R 12 are excluded.nIridium-containing thin films are produced by using the compound as a precursor bynCVD process. |