http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1454344-B1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36f8253f3d0d59bcd9259217d4385d10 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-75 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5223 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-55 |
| classificationIPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| filingDate | 2002-10-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2012-03-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9c2aa5c4201742b9d2c9dd849537e4ff http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e926d5927a6980948e88e284e4541fff http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2aabe79ea757bb39208b5419a8f8dc56 |
| publicationDate | 2012-03-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | EP-1454344-B1 |
| titleOfInvention | Method for fabricating an integrated semiconductor product comprising a metal-insulator-metal capacitor |
| abstract | According to the invention, in order to produce an integrated semiconductor product comprising integrated metal-insulator-metal capacitors, a dielectric protective layer (5) and a dielectric auxiliary layer (16) are first deposited on a first electrode (2). Said protective layer and said auxiliary layer (16) are then removed (17) from the region above the first electrode, and a dielectric layer (6) is produced, the pile of metallic strips (7, 8, 9) for the second electrode being applied to said dielectric layer. The metal-insulator-metal capacitor is then structured according to known etching methods. Dielectric capacitor layers consisting of freely selectable materials and having any thickness can be formed in this way. The present invention is especially advantageous in that it enables via holes to be etched in a significantly more simple manner than according to prior art, as the remaining dielectric capacitor layer covering the metallic strips does not need to be etched through. |
| priorityDate | 2001-12-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID418354341 http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID23978 |
Total number of triples: 20.