http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1445774-A2
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c5397fc5ff75ee49a454558b68b36baa |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-16 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8246 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C11-16 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C11-15 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L43-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-105 |
| filingDate | 2004-01-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_002e70c4ea073dc641e741412661803e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b4551cb28c4fa697a2a8fef8b9c89d00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c53f51edfacae9805d0df3884bdd2941 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6fd3b3c4d151178b880dcf305e3ed642 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_39e50ab323e064ef03afa0023f7c2aa4 |
| publicationDate | 2004-08-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | EP-1445774-A2 |
| titleOfInvention | Magnetic random access memory device |
| abstract | A four-conductor MRAM device comprises an array of memory cells, eachnof the memory cells including a first magnetic layer (104), a dielectric (106), and ansecond magnetic layer (105), local column sense lines (302) wherein one isnelectrically connected to the first magnetic layer (104) of the array of memoryncells, local row sense lines (303) wherein one is electrically connected to thensecond magnetic layer (105), global column write lines (301) parallel to thencolumn sense lines (302), global row write lines (304) parallel to the local rownsense lines (303), and wherein the local column sense lines (302) and the local rownsense lines (303) are connected to read data from the array of memory cells andnthe global column write lines (301) and the global row write lines (304) arenconnected to write data to the array of memory cells. |
| priorityDate | 2003-01-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 24.