| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_99505f5f312672820e9f78c254c00a4d |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T29-49044 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-161
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N50-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11B5-3903
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y40-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01F41-307
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y25-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01F10-3254 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C11-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8246
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11B5-39
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01F41-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01F10-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L43-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L43-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01F10-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01F10-30 |
| filingDate |
2002-10-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_45ecd5de904c650ece9aca92dbd2df85
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_79d014e0f6f772596b673cf74ad55b72
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7b862598c3484de26bfd34ae25281233 |
| publicationDate |
2004-07-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-1435101-A1 |
| titleOfInvention |
Spin-valve magnetoresistive device with enhanced performance |
| abstract |
Magnetoresistive device comprising a spin valve formed from a stack of layers including at least two magnetic layers for which a relative orientation of their magnetisation directions are capable varying under influence of a magnetic field; at least one discontinuous dielectric or semiconducting layer with electrically conducting bridges at least partially passing through a thickness of the dielectric or semiconducting layer, the bridges configured to locally concentrate current that passes transversely through the stack; and means for circulating a current in the spin valve transverse to the plane of the layers, characterised in that the dielectric or semiconducting layer with electrically conducting bridges is arranged inside one of the magnetic layers. |
| priorityDate |
2001-10-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |