| abstract |
A semiconductor chip having a plurality of device formative layersnthat are formed into an integrated thin film is provided by a techniquenfor transferring. According to the present invention, a semiconductornchip that is formed into a thin film and that is highly integrated cannbe manufactured by transferring a device formative layer (501) with anthickness of at most 50µm which is separated from a substrate (322) intonanother substrate by a technique for transferring, and transferringnanother device formative layer with a thickness of at most 50µm which isnseparated from another substrate to the above device formative layers,nand, repeating such transferring process. |