| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76834
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02332
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3185
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76801
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76807
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76826
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3144
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76829
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76831
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0234 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-318
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-314
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 |
| filingDate |
2002-08-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_77758b2d84288213774f9be120ad9990
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_94bf9c4a6ea8168cf63343a5deece1c6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_db74f3ba796a925afaa52dbdb658fa61 |
| publicationDate |
2005-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-1432023-A4 |
| titleOfInvention |
SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME |
| abstract |
A hole serving as part of a connection hole (21) is formed by etching through a second insulation layer (13) consisting of a porous silicon oxide film and through a third insulation layer (14). Then, a second stopper film (20) is used to form a second groove (23) in the third insulation layer (14) by etching. Silicon oxide films on the side walls of the connection hole (21) and the second groove (23) are directly nitrided by using a RLSA type plasma processing device to form a barrier layer (25) consisting of an SiN film. The second stopper film (20) is formed by direct nitriding in the same manner as the barrier layer (25). |
| priorityDate |
2001-08-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |