| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31122 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 |
| filingDate |
2003-11-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_390ca0967680ebea61e2f5e3ffa8279e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_20bff001dee27104bc6fe42f2d5f9d93
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d73fddeb26fc0eb13bbd594190fec5ec |
| publicationDate |
2004-05-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-1422751-A2 |
| titleOfInvention |
Method of plasma etching high-K dielectric materials with high selectivity to underlying layers |
| abstract |
A method of plasma etching a layer of dielectric material having andielectric constant that is greater than four (4). The method includes exposing thendielectric material layer to a plasma comprising a hydrocarbon gas and a halogenncontaining gas. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2004109772-A2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2004109772-A3
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2007030522-A2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2007030522-A3
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7709397-B2 |
| priorityDate |
2002-11-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |