| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d360ebcbfe076afed45db156b0bde760 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-548 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1884
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-075 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01M14-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-48
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01B13-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-075
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-44
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18 |
| filingDate |
2002-08-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2006-10-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_815a6023f198c24f7dc5f516ce520054
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_472bc5df629e768c415a4f84222959ed |
| publicationDate |
2006-10-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-1421630-B1 |
| titleOfInvention |
Method of depositing an oxide layer on a substrate and a photovoltaic cell using said substrate |
| abstract |
The invention relates to a method of depositing a transparent conductive oxide layer (12) on a tempered glass substrate (10) which is disposed inside a chamber (26). The inventive method consists in: providing sources (32, 34, 36) which contain an oxygen-based liquid compound, a liquid compound of the metal that is intended to form the oxide and a gas or liquid dopant respectively; establishing a temperature of between 130 and 300 °C and pressure of between 0.01 and 2 mbar in the chamber; and putting the sources in communication with said chamber. In this way, the liquids are vaporised at the surface thereof, sucked into the chamber without any need for a carrier gas and made to react with the dopant such that the oxide layer forms on the substrate. |
| priorityDate |
2001-08-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |