| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1af8df51ce24ca931ae718fb747f6aa0 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-548 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-076 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-075
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L25-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-032
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-076 |
| filingDate |
2003-11-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9e6f75060248cf32e853500b6a4aa825
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9c3e3bd1c0c1399a5f3d9d36c31f9e2b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b34d79ad73189c64b3cdb953494c8005
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_018d37af5ad45e87c9cf94c9359687d3 |
| publicationDate |
2004-05-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-1420461-A2 |
| titleOfInvention |
Stacked photovoltaic device |
| abstract |
Provided is a stacked photovoltaic devicencharacterized in that: a first i-type semiconductornlayer comprises amorphous silicon hydride, and secondnand subsequent i-type semiconductor layers comprisenamorphous silicon hydride or microcrystalline silicon,nthe i-type semiconductor layers being stacked innorder from a light incidence side; and when an openncircuit voltage is assigned Voc in the case where anpin photoelectric single element is manufacturednusing a pin element having the i-type semiconductornlayer made of microcrystalline silicon of pinnelements having the second and subsequent i-typensemiconductor layers, respectively, and a layernthickness of the i-type semiconductor layer concernednis assigned t, a short-circuit photoelectric currentndensity of the stacked photovoltaic device isncontrolled by the pin element including the i-typensemiconductor layer having the largest value of Voc/t. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2006019861-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2467882-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2467882-A4
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7265036-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2011021756-A1 |
| priorityDate |
2002-11-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |