| abstract |
Low dielectric materials and films comprising same have been identified fornimproved performance when used as interlevel dielectrics in integrated circuits as well asnmethods for making same. In certain embodiments of the invention, there is provided anlow-temperature process to remove at least a portion of at least one pore-forming phasenwithin a multiphasic film thereby forming a porous film. The pore-forming phase may benremoved via exposure to at least one energy source, preferably an ultraviolet lightnsource, in a non-oxidizing atmosphere. |