| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c3a2f00e72ba6e4c09b6da573427fbed |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7827
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1203
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-315
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-482
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78642 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66666
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-053
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-34 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| filingDate |
2002-02-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_749b8a125d3fc05506979b5e4d6ea60b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2315e44ae271248d6eedd16a4875146d |
| publicationDate |
2004-05-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-1419532-A2 |
| titleOfInvention |
Folded bit line dram with vertical ultra thin body transistors |
| abstract |
A folded bit line DRAM device made of an array of memory cells is provided wherein each memory cell has a pillar which extends outwardly from a semiconductor substrate. Each pillar has a single crystalline first contact layer (304) and a single crystalline second contact layer (306) which are separated by an oxide layer (308). A single crystalline vertical transistor has an ultra thin single crystalline vertical first source/drain region (314) coupled to the first contact layer (304), an ultra thin single crystalline vertical second source/drain region (316) coupled to the second contact layer (306), and an ultra thin single crystalline vertical body region (312) which opposes the oxide layer (308) and couples the first (314) and the second (316) source/drain regions. |
| priorityDate |
2001-02-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |