| abstract |
Since a 5 GHz-band broadband has a frequency twice that ofn2.4GHz, the parasitic capacitance greatly influences deteriorationnin isolation of a switching device used in this frequencynregion. Therefore, to improve isolation, a shunt FETn(FET3, FET4) is added to the device. The switching devicenalso includes a protecting element (200) that has a first n + -typenregion, an insulating region and a second n + -type region.nThis protecting element (200) is connected in parallelnbetween two electrodes of the shunt FET (FET3, FET4). Sincenelectrostatic charges are discharged between the first andnsecond n + -type regions, the electrostatic energy reaching annoperation region of the shunt FET (FET3, FET4) can be reducednwithout an increase in parasitic capacitance. |