| abstract |
A field-effect transistor has a channel disposed on a substrate, ansource electrode connected to a starting end of the channel, a drain electrodenconnected to a terminal end of the channel, an insulator disposed onnan upper or side surface of the channel, and a gate electrode disposed onnthe upper or side surface of the channel with the insulator interposed therebetween.nThe channel is made of a plurality of carbon nanotubes. |