| abstract |
Gate lines (123) are formed on a substrate. A gate insulating layer, an intrinsic a-Sinlayer, an extrinsic a-Si layer, a lower film of Cr and an upper film of Al containingnmetal are sequentially deposited. A photoresist having thicker first portions (52) on wirenareas and thinner second portions (54) on channel areas is formed on the upper film. Thenupper film on remaining areas are wet-etched, and the lower film and the a-Si layers onnthe remaining areas are dry-etched along with the second portions of the photoresist.nThe upper film, the lower film, and the extrinsic a-Si layer on the channel areas arenremoved. The removal of the upper film and the lower film on the channel areas arenperformed by wet etching, and the first portions of the photoresist are removed afternthe removal of the upper film on the channel areas. |