| abstract |
The invention provides a multilayer ceramic chipncapacitor which satisfies X7R property or a temperaturenresponse of its capacitance and shows a minimal change ofncapacitance with time under a DC electric field, a longnaccelerated life of insulation resistance (IR) and good DCnbias performance and also provides a multilayer ceramic chipncapacitor which is resistant to dielectric breakdown innaddition to the above advantages. n In a first form of the invention, dielectric layersncontain BaTiO 3 as a major component and MgO, Y 2 O 3 , at leastnone of BaO and CaO, and SiO 2 as minor components in anspecific proportion. In a second form, the dielectricnlayers further contain MnO and at least one of V 2 O 5 and MoO 3 nas minor components in a specific proportion. n In the first form, the dielectric layer has a meanngrain size of up to 0.45 µm, and in an X-ray diffractionnchart of the dielectric layer, a diffraction line of (200)nplane and a diffraction line of (002) plane at leastnpartially overlap one another to form a wide diffractionnline which has a half-value width of up to 0.35°. |