| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2a819eda0adf22936a52362eeebb9fb4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ebca25e4f737729fb927875476e58a9f |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-778
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7783 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-338
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-778
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-812
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-20 |
| filingDate |
2002-04-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2017-04-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3230d5f22f2e549200ad5fa1a146125f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ff5c48cd37dc6827ad70b77e494b6242
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0a6d80f2b7d9aef375dd0ee3e721b7f5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3ebf6df5836209fe698a5ea861d5a47c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_10ce83cf90bf9a59e8f4675d8f364cf5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4eb1648335dac2a527ec9f241ff3d7c4 |
| publicationDate |
2017-04-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-1390983-B2 |
| titleOfInvention |
Group-iii nitride based high electron mobility transistor (hemt) with barrier/spacer layer |
| priorityDate |
2001-05-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |