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filingDate 2002-04-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c04b4cb3134b1080717b7a54f4d2a12e
publicationDate 2004-02-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber EP-1387453-A1
titleOfInvention Gallium nitride compound semiconductor element
abstract In a gallium nitride semiconductor device comprising annactive layer made of an n-type gallium nitride semiconductornthat includes In and is doped with n-type impurity and a p-typencladding layer made of a p-type gallium nitridensemiconductor that includes Al and is doped with p-typenimpurity, nā€ƒā€ƒā€ƒa first cap layer, made of a gallium nitridensemiconductor that includes n-type impurity of lowernconcentration than that of said active layer and p-typenimpurity of lower concentration than that of said p-typencladding layer, and a second cap layer made of a p-typengallium nitride semiconductor that includes Al and is dopednwith p-type impurity are stacked one on another between saidnactive layer and said p-type cladding layer.
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priorityDate 2001-04-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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Total number of triples: 34.