Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36f8253f3d0d59bcd9259217d4385d10 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G73-22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02118 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02203 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02282 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G69-265 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G69-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G69-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G73-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01B3-441 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76801 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08G69-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08G69-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08G73-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08G73-22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-312 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01B3-44 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01B3-30 |
filingDate |
2003-06-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_74ce767632953a29117a592b955930c8 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d2cbfe922f4fa2f1a2ed0b0ed1291875 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bb51ecc6250cd828e37570304f15e190 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d440c6d380e416edcd676e74b15de362 |
publicationDate |
2004-01-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
EP-1375559-A1 |
titleOfInvention |
Dielectrics with copper diffusion barrier |
abstract |
The invention relates to new poly-o-hydroxyamides which are related tonCyclize polybenzoxazoles, which have a high diffusion barrier effectnshow towards metals. The poly-o-hydroxyamidesncan be based on common techniquesnApply semiconductor substrate and simply by heating tonImplement polybenzoxazole. Due to the high blocking effectnDiffusion of metals can affect a diffusion barriernlargely omitted between the conductor track and the dielectricnbecome. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2020023666-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7070904-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11768434-B2 |
priorityDate |
2002-06-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |