| abstract |
A polishing slurry and a polishing method which arensuitably used in a CMP technique for flattening a surface ofna substrate in a production process of a semiconductorndevice. The polishing slurry comprises particles and anmedium in which at least a part of the particles arendispersed, wherein the particles are made of at least one ofn(1) a cerium compound selected from cerium oxide, ceriumnhalide and cerium sulfide and having a density of 3 to 6ng/cm 3 and an average particle diameter of secondarynparticles of 1 to 300 nm and (2) a tetravalent metalnhydroxide. A polishing method using the polishing slurryntakes advantage of a chemical action of particles in thenpolishing slurry and minimizes a mechanical action of thenparticles, thereby achieving a decrease in scratches causednby the particles and an increase in polishing rate at thensame time. |