| abstract |
A wiring (4) which is formed by filling a via hole (2)nand a wiring trench (3) with Cu via a base film is formednby a damascene method. Thereafter, an SiC:H film (5) isnformed to cover an upper surface of the wiring. Atnthis time, an N atom content thereof is controlled tonbe 8 (atm%) to 20 (atm%) by adding an N-containingngas at the time of forming the SiC:H film, therebyncausing the film density of the SiC:H film to be 2.1n(g/cm 3 ) or higher. |