| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a066fcffe7149007d17265033edf718a |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B23K2103-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-1703
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-10158
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-0558
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0095
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B23K2101-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-11
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05568
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05573
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-06102
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-948 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B23K26-073
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B23K26-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-20 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-78 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B23K26-073
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B23K26-40 |
| filingDate |
2001-11-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3077002941186db80aff78bacc1b9309
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b7f23dd3b4792360a871d513f61eda3f |
| publicationDate |
2007-05-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-1341991-A4 |
| titleOfInvention |
LASER ISOLATED CHIP WITH TAPPED SIDE WALLS TO IMPROVE LIGHTING OUTPUT |
| abstract |
A method for separating individual optoelectronic devices, such as LEDs, from a wafer includes directing a laser beam (256) having a width toward a major surface of the semiconductor wafer. The laser beam has an image with a first portion of a first energy per unit width and a second portion of a second energy per unit width less than the first energy. The laser beam image (266) cuts into the first major surface of the semiconductor wafer to produce individual devices. |
| priorityDate |
2000-11-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |