http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1341720-B1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_221752386fe14efebba4fb037c08dca3 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P20-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-547 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1804 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B33-029 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B33-039 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01B33-029 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01B33-039 |
| filingDate | 2001-11-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2005-01-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2dae9fed6c45103a5269e40235d07253 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_70d7ffe9d71a35c7d2501aeccebcdf05 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5963b4fb1e6496601a363237be6cf4f7 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_375ba4a25f5c8a11ad14334056284062 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6df7520ae9027047bd7344e4e33c8300 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_eaa0d1f4f8dde744b6052f249c504dc3 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4a249bd7ca32aebb4c93a7492c3254a3 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_517aae700e27cd5b56ee04f9b9ff1404 |
| publicationDate | 2005-01-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | EP-1341720-B1 |
| titleOfInvention | Method for the production of high purity silicon |
| abstract | The invention relates to a method for the production of high purity silicon, characterized by the following steps: a) reaction of metallic silicon with silicon tetrachloride (SiCl<SUB>4</SUB>), hydrogen (H<SUB>2</SUB>) and hydrochloric acid (HCl) at a temperature of 500 to 800° C. and a pressure of 25 to 40 bar to give a trichlorosilane-containing (SiHCl<SUB>3</SUB>) feed gas stream, b) removal of impurities from the resultant trichlorosilane-containing feed gas stream by scrubbing with condensed chlorosilanes at a pressure of 25 to 40 bar and a temperature of 160 to 200° C. in a multi-stage distillation column, to give a purified trichlorosilane-containing feed gas stream and a solid-containing chlorosilane suspension and a distillative separation of the purified feed gas stream into a partial stream essentially comprising SiCl<SUB>4 </SUB>and a partial stream, essentially comprising SiHCl<SUB>3</SUB>, c) disproportionation of the SiHCl<SUB>3</SUB>-containing partial stream to give SiCl<SUB>4 </SUB>and SiH<SUB>4</SUB>, whereby the disproportionation is carried out in several reactive/distillative reaction zones, with a counter-current of vapour and liquid, on catalytic solids at a pressure of 500 mbar to 50 bar and SiHCl<SUB>3 </SUB>is introduced into a first reaction zone, the lower boiling SiH<SUB>4</SUB>-containing disproportionation product produced there undergoes an intermediate condensation in a temperature range of -25° C. to 50° C., the non-condensing SiH<SUB>4</SUB>-containing product mixture is fed to one or more further reactive/distillative reaction zones and the lower boiling product thus generated, containing a high proportion of SiH<SUB>4 </SUB>is completely or partially condensed in the head condenser and d) thermal decomposition of the SiH<SUB>4 </SUB>to give high purity silicon. |
| priorityDate | 2000-12-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 32.