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filingDate 2002-12-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2003-07-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber EP-1328003-A2
titleOfInvention Field emission-type electron source
abstract A lower electrode (2) and surface electrode (7)ncomposed of a layer-structured conductive carbide layer isnformed on one principal surface side of the substrate (1)ncomposed of an insulative substrate such as a glass ornceramic substrate. A non-doped polycrystalline siliconnlayer (3) is formed on the lower electrode (2). An electronntransit layer (6) composed of an oxidized porousnpolycrystalline silicon is formed on the polycrystallinensilicon layer (3). The electron transit layer (6) isncomposed of a composite nanocrystal layer includingnpolycrystalline silicon and many nanocrystalline siliconsnresiding adjacent to a grain boundary of thenpolycrystalline silicon. When voltage is applied betweennthe lower electrode (2) and the surface electrode (7) suchnthat the surface electrode (7) has a higher potential,nelectrons are injected from the lower electrode (2) towardnthe surface electrode (7), and emitted through the surfacenelectrode (7) through the electron transit layer (6).
priorityDate 2001-12-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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