| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3a62c92e56568bd104089aac22ca487b |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-913 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76883
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76834 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-318 |
| filingDate |
2001-06-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_67629e4828d0fdd71e99721ddd7ac62c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_eb6c954b6e87f6c184e7d8ac6ac8f081
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ce04823c5321c3abd280ed8fc99b90db
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_709fa93c23a12535325271e1a74a9bea
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_42e07c502b53a2d3068f52e4c3bc7bbd
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_97b22a44542905014bf649b2d9a83c11
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_02382d42706aed302ff2f10ac9b92aed |
| publicationDate |
2003-04-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-1303876-A2 |
| titleOfInvention |
Method of forming copper interconnect capping layers with improved interface and adhesion |
| abstract |
The integrity of the interface and adhesion between a barrier or capping layer (40) and a Cu or Cu alloy interconnect member (13A) is significantly enhanced by delaying and/or slowly ramping up the introduction of silane to deposit a silicon nitride capping layer after treating the exposed planarized surface (30) of the Cu or Cu alloy with an ammonia-containing plasma. Other embodiments include purging the reaction chamber with nitrogen at elevated temperature to remove residual gases prior to introducing the wafer for plasma treatment. |
| priorityDate |
2000-07-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |