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publicationDate 2003-03-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber EP-1288329-A1
titleOfInvention Process for fabricating of thin nitride- or oxide layers
abstract In order to convert only the substrate material into the corresponding oxide or nitride in the production of thin oxide or nitride layers by means of a plasma jet from a high-frequency plasma jet source, without attacking the underlying ferromagnetic layer, the ion energy and ion beam density of a dense, highly ionized, quasi-neutral plasma jet become high Proportion of oxygen or nitrogen species controlled independently. The reaction rate can thus be set independently of the penetration depth and high-quality oxide or nitride layers are obtained.
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