| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b0120933550ea729b9f3186c3772531b |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S3-06754
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-0287
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S3-302
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-1212
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-02325
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-1203
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-2275
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-02251
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-1218
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-02216
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-1215
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S3-09408
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-1096
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-1039 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-06256 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-022
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-227
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-042 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-0625 |
| filingDate |
2002-07-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fed8f24c95ab2c7004625e0b99825cb7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1cc6d643720422511d26909d433a2f5d |
| publicationDate |
2003-02-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-1283573-A2 |
| titleOfInvention |
A distributed bragg reflector semiconductor laser |
| abstract |
A semiconductor device for providing a light source suitable for use as anpumping light source in a Raman amplification system. The device includes a lightnreflecting facet positioned on a first side of the semiconductor device, a light emittingnfacet positioned on a second side of the semiconductor device thereby forming anresonator between the light reflecting facet and the light emitting facet. An activenlayer configured to radiate light in the presence of an injection current is positionednwithin the resonator along a portion of the resonator length, and a wavepath layer isnpositioned adjacent to the active layer within a remaining portion of the resonatornlength. The wavepath layer includes a diffraction grating configured to select anspectrum of light including multiple longitudinal modes. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1729381-A4
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109643881-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109643881-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1729381-A1 |
| priorityDate |
2001-07-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |