| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_245828d43657f634781dd2458d793fc4 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H02N3-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N10-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N10-13
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-93
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J45-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-86 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H02N3-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-86
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L35-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L35-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L35-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L35-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L35-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J45-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L35-00 |
| filingDate |
2001-03-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cb685418209eceee02245060571c38ac
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_89b7203dcdbc832150efcb5c3e766d1a |
| publicationDate |
2003-02-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-1282935-A2 |
| titleOfInvention |
Thermal diode for energy conversion |
| abstract |
Solid state thermionic energy converter semiconductor diode implementation and method for conversion of thermal energy to electric energy, and electric energy to refrigeration. In embodiments of this invention a highly doped n region (14) can serve as an emitter region, from which carriers can be injected into a gap region. The gap region (16) can be p-type, intrinsic, or moderately doped n-type (14). A hot ohmic contact (12) is connected to the n-type region. A cold ohmic contact (20) serves as a collector and is connected to the other side of the gap region. The cold ohmic contact has a recombination region formed between the cold ohmic contact and the gap region and a blocking compensation layer that reduces the thermoelectric back flow component. The heated emitter relative to the collector generates an emf which drives current through a series load. The inventive principle works for hole conductivity, as well as for electrons. |
| priorityDate |
2000-03-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |