abstract |
The present invention is for providing ansophisticated active matrix type organicnsemiconductor device. A first electrode 102 isnformed on an insulated surface. A second insulatednfilm 104 is formed on the first electrode 102 viana first insulated film 103. An organicnsemiconductor film is formed on an opening partnformed on the second insulated film 104 and thensecond insulated film 104. An organicnsemiconductor film 105 is obtained by polishingnthe same until the second insulated film 104 isnexposed. Furthermore, by forming a secondnelectrode 106 and a third electrode 107 on thenorganic semiconductor film 105, an organicnsemiconductor device of the present invention cannbe obtained. |