| abstract |
An improved process flow for an atomic resolution storage (ARS) systemn(200) deposits conductive electrodes (434(c)), together with a protective layern(350), on a media side of a rotor wafer (220) before most of other devicenprocessing, thus preserving a surface (460) for ARS storage media (222) fromnsubsequent wafer thinning process. CMOS circuitry (232) is also formed in a statornwafer (230) at a later stage. Therefore, the CMOS circuitry (232) is less likely tonbe damaged by heat processing. In addition, processing of the media side of thenrotor wafer (220) may be performed with loosened thermal budget. Finally,nbecause the media side of the rotor wafer (22) is processed before wafer bonding ofnthe rotor wafer (220) and the stator wafer (230), there is less probability ofndegradation of the wafer bonding. Therefore, device yield may be enhanced,nleading to lower manufacturing cost. |