| abstract |
To enable substantial simplifications in manufacture of integrated circuits andnreduction in the production costs, a simple process for making devices of nanometricndimensions, comprising etching insulative grooves (8, 16, 18) in a conductivensubstrate to define between the lines charge carrier flow paths, which are normallynelongate channels (20) at least 100 nm long and less than 100nm wide. Using thisnmethod, both diode-type and transistor-type devices can be realised. The current-voltagencharacteristic of the diode-like devices are similar to a conventional diode, butnboth the threshold voltage (from 0V to a few volts) and the current level (from nA tonµA) can be tuned by orders of magnitude by changing the device geometry. Standardnsilicon wafers can be used as substrates. A full family of logic gates, such as OR,nAND, and NOT, can be constructed solely by simply etching grooves in thensubstrate.. |