| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_44af4f2a399dad4a6d228e9e9d2e0841 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-3063
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S2304-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-04257
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-40 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-34333
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y20-00 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-30 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-323
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-343
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-042 |
| filingDate |
2002-03-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_08479cb7d072efe8cfd3ac04799a8cce
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e1955c2cb6ad74194fb6bb9c40ade69c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_be99a64c86f72b49642504ed2d4d4249 |
| publicationDate |
2002-10-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-1246264-A2 |
| titleOfInvention |
Nitride semiconductor device |
| abstract |
A nitride semiconductor device having high electrodencontact properties is disclosed. The nitride semiconductorndevice includes a semiconductor layer made of a group IIInnitride semiconductor, and a metal electrode for supplyingnthe semiconductor layer with a carrier. The device has anfirst contact layer made of a group III nitride semiconductorn(Al x Ga 1-x ) 1-y In y N (0≤x≤1, 0<y≤1), laminated between thensemiconductor layer and the metal electrode, and a group IInelement added thereto, and a second contact layer made of angroup III nitride semiconductor Al x' Ga 1-x' N (0≤x'≤1) andnlaminated between the first contact and the metal electrode. |
| priorityDate |
2001-03-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |