| abstract |
A process for the synthesis of carbon coatings on the surface of metal carbides, preferably SiC, by etching in a halogen-containing gaseous etchant, and optionally hydrogen gas, leading to (he formation of a carbon layer on the metal carbide. The reaction is performed in gas mixtures containing about 0% (trace) amounts to 100% halogen-containing gaseous etchant, e.g., Cl2, and about 0% to 99.9% H2 (hydrogen gas) at temperatures from about 100° C. to about 4,000° C., preferably about 800° C. to about 1,200° C., over any time range, maintaining a pressure of preferably about one atmosphere, to about 100 atmospheres. |