| abstract |
A method of forming a low dielectric constant interlayer dielectric film on ansubstrate by reacting, under chemical vapor deposition conditions sufficient to depositnthe film on the substrate, an organosilicon precursor comprising a silyl ether, a silyl ethernoligomer, or an organosilicon compound containing one or more reactive groups, to formnan interlayer dielectric film having a dielectric constant of 3.5 or less. The films formednby the above method. |