http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1208612-B1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_681a3e32628e7a637b7318f0776fe26b |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-46 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-221 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-236 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K19-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-13 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-167 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-05 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762 |
| filingDate | 2000-08-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2011-01-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_75516338697bca755343439e3ccda628 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8f0173cc7e5f9d0a56bda7ba7bebfb75 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ecb287231893d6d82c52fe4edba86d5e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fcd03260f3f4cd3d3e33eb00b75ce24a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_be1c50abf053610651ff28386939fe71 |
| publicationDate | 2011-01-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | EP-1208612-B1 |
| titleOfInvention | Method for forming a patterned semiconductor film |
| abstract | A process for forming a pattern in a semiconductor film is provided. The process comprises the steps of: providing a substrate; providing an organic semiconductor film adjacent the substrate; and providing a destructive agent adjacent selected portions of the organic semiconductor film, the destructive agent changing a property of selected portions of the organic semiconductor film substantially through the full thickness of the organic semiconductor film such that the property of the selected portions of the organic semiconductor film differs from the property of remaining portions of the organic semiconductor film. A method for manufacturing a transistor comprises the steps of: providing a substrate; providing a gate electrode adjacent the substrate; providing a gate dielectric adjacent the substrate and the gate electrode; providing a source electrode and a drain electrode adjacent the gate dielectric; providing a mask adjacent the gate dielectric in a pattern such that the source electrode, the drain electrode, and a portion of the gate dielectric remain exposed; and providing a semiconductor layer comprising one of an organic semiconductor and a plurality of inorganic colloidal particles, adjacent the source electrode, the drain electrode, the portion of the gate dielectric and the mask, thereby forming the transistor, the semiconductor layer having a thickness less than a thickness of the mask. |
| priorityDate | 1999-08-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 219.