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filingDate 1996-08-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_10a48b94c412f5233584359360d54375
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publicationDate 2002-04-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber EP-1199740-A2
titleOfInvention Procedure for drying silicon
abstract A method of drying a substrate surface (1), comprising: dipping the substrate into a liquid bath (2); separating the substrate from the liquid bath (2), whereby the liquid of the liquid bath (2) comprises an aqueous HF solution (3), the substrate surface being hydrophobic upon separation from the liquid bath, the substrate being separated from the bath at a rate that permits the bath liquid to drain from the hydrophobic surface of the substrate to produce a dry substrate; and that a gas comprising an O2/O3 mixture that forms a hydrophilic surface on the substrate is directed over the surface of the substrate (1) after separating the substrate (1) from the liquid bath. <IMAGE>
priorityDate 1995-08-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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