Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G09G2310-0251 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G09G2310-0256 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G09G2300-0842 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-346 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K59-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G09G2320-043 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-861 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G09G3-3233 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K50-81 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G09G3-006 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05B33-10 |
classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-00 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05B44-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G09G3-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-52 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05B33-10 |
filingDate |
2001-10-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_21747acfb77b0d181ab4dff0d66658d4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_896132a9b7bc95fc32fbb59ca9848661 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_de3f7b4fc59cb65d83e60803746e86c3 |
publicationDate |
2002-04-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
EP-1198017-A2 |
titleOfInvention |
Method of fabricating and/or repairing a light emitting device |
abstract |
A method of repairing a light emitting device which makes high quality imagendisplay possible even if a pin hole is formed during formation of an EL layer is provided.nThe method of repairing a light emitting device is characterized in that a reverse biasnvoltage is applied to an EL element at given time intervals to thereby reduce a currentnflowing into an EL element when the reverse bias voltage is applied to the EL element. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8476827-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10333003-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2257122-A4 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2257122-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9887294-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8841928-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2437576-A4 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2437576-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7425937-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2579685-A4 |
priorityDate |
2000-10-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |