| abstract |
An inorganic insulating film 103 of SiC is formed on anfluorine-containing carbon film 102 by a chemical vaporndeposition process using SiF 4 and C 2 H 4 as source gases. By usingnSiF 4 and CF 4 containing no hydrogen (H) as source gases, H inhibitednfrom being incorporated into the inorganic insulating film 103nforming a hard mask 113. Thus, H having diffused outwardly fromnthe inorganic insulating film 103 is bonded to fluorine (F) innthe fluorine-containing carbon film 102 to form HF which inhibitsnthe corrosion of the inorganic insulating film 103 and so forth.nThus, it is possible to inhibit the deterioration of the adhesionnof the hard mask 113 formed of the inorganic insulating film 103nto other layers, such as the fluorine-containing carbon film 102. |