| abstract |
There is provided a semiconductor device whichncomprises a capacitor including a lower electrode, andielectric film, and an upper electrode, a firstnprotection film formed on the capacitor, a first wiringnformed on the first protection film, a first insulatingnfilm formed on the first wiring, a second wiring formednon the first insulating film, a second insulating filmnformed on the second wiring, and at least one of a secondnprotection film formed between the first insulating filmnand the first wiring to cover at least the capacitor andna third protection film formed on the second insulatingnfilm to cover the capacitor and set to an earth potential.nAccordingly, the degradation of the ferroelectricncapacitor formed under the multi-layered wiring structurencan be suppressed. |