| abstract |
A method of preventing copper transport on a semiconductor wafer,ncomprising the following steps. A semiconductor wafer having a front side and anbackside is provided. Metal, selected from the group comprising aluminum,naluminum-copper, aluminum-silicon, and aluminum-copper-silicon is sputtered onnthe backside of the wafer to form a layer of metal. The back side sputterednaluminum layer may be partially oxidized at low temperature to further decreasenthe copper penetration possibility and to also provide greater flexibility innsubsequent copper interconnect related processing. Once the back side layer is innplace, the wafer can be processed as usual. The sputtered back side aluminumnlayer can be removed during final backside grinding. |