| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a736b9f901803597a2831d2967a36886 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31604
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-762
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76232
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76837
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3185 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-318
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-76
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762 |
| filingDate |
2000-03-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6260e88be5703c44ebc70379ce74c663 |
| publicationDate |
2002-01-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-1169733-A1 |
| titleOfInvention |
Method for filling gaps on a semiconductor wafer |
| abstract |
A method for filling gaps (1) on a semiconductor wafer (2) with a dielectric material (3, 8) employs a plasma enhanced chemical vapor deposition (PECVD) process with a temperature in the range of 500 to 700°C. As a result of deposition gaps for e.g. shallow trench isolation or premetal dielectric techniques are filled homogeneously without any voids. The deposition may be improved with the application of a second radio frequency signal. |
| priorityDate |
1999-03-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |