http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1167955-A2

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filingDate 2001-06-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2002-01-02-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber EP-1167955-A2
titleOfInvention High temperature matter sensor
abstract ein Substrat (4), eine Anordnung (6), um den Sensor auf Temperatur zu bringen und zu halten,nund eine schichtartige Kondensatorstruktur (38) mit Strukturgrößen kleiner alsn50µm, auf die eine Funktionsschicht (18) aufgebracht ist. The invention relates to a high-temperature substance sensor, comprising a substrate (4), an arrangement (6) for bringing the sensor to temperature and maintaining it, and a layer-like capacitor structure (38) with structure sizes smaller than 50 μm, to which a functional layer (18) is applied. n n n Aufbringen einer geschlossenen oder bereits vorstrukturierten elektrisch leitfähigennSchicht als Vorläufer der Kondensatorstruktur (38) mittels Dickschichttechnik, Strukturierung der elektrisch leitfähigen Schicht mittels photolithographischemnVerfahren. n According to the invention, the layered capacitor structure (38) was produced as follows: Applying a closed or already pre-structured electrically conductive layer as a precursor of the capacitor structure (38) using thick-film technology, Structuring of the electrically conductive layer using a photolithographic process.
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priorityDate 2000-06-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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