| abstract |
A method for fabricating a semiconductor device that includesna semiconductor layer, containing Si and C, for itsnactive region. Ions of a dopant are implanted into an SiC substratena number of times, thereby forming a doped layer withnmultiple dopant concentration peaks in the substrate. Thereafter,nthe substrate is placed and annealed in a chamber withnan etching gas (e.g., hydrogen gas) supplied thereto. In thisnmanner, while the substrate is being annealed, the upper partnof the doped layer is removed with the lower part thereofnleft. Accordingly, the dopant concentration at the surfacenof the lower doped layer can be easily controlled to such anvalue as required for forming a Schottky or ohmic electrodenthereon. In addition, the upper doped layer with a lot ofndefects is removed, and therefore the surface region of thensubstrate can have its crystallinity improved. |