abstract |
A semiconductor memory device (801) having a firstnterminal (805) for receiving a normal voltage (Vcc)nfrom a normal voltage supply means, and a secondnterminal (806) for receiving a high voltage (Vpp) fromna high-voltage supply means (802), the high voltagen(Vpp) being required to write or erase data and highernthan the normal voltage (Vcc) required to read data.nThe semiconductor memory device comprises a thirdnterminal (807) for providing the high-voltage supplynmeans (802) with a control signal that controls thensupply of said high voltage. In this way, the twonvoltage supplies become easy to use and operable like ansingle supply means. |