http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1158071-A2
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76837 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-045 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-321 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76229 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-402 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31612 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-44 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-40 |
| filingDate | 2001-05-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_357f788822f8f6ff2746e8990bfc49cf http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0cbef44d0d7dd845c43bf6fa2890c145 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d683f6992c824d7c75df2fa5f2dbacb7 |
| publicationDate | 2001-11-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | EP-1158071-A2 |
| titleOfInvention | Method for depositing a layer on a surface of a substrate |
| abstract | A trench-fill material is deposited to fill a trench in a substrate disposed in a processnchamber. An inert gas is introduced into the process chamber and a plasma is formed to heatnthe substrate to a preset temperature, which is typically the temperature at which deposition ofnthe trench-fill material is to take place. The plasma is terminated upon reaching the presetntemperature for the substrate. A process gas is then flowed into the process chamber withoutnplasma excitation until the process gas flow and distribution achieve a generally steady statenin the process chamber. A plasma is then formed to deposit the trench-fill material on the surfacenof the substrate and fill the trench. By establishing generally steady state conditions in thenchamber prior to deposition, transient effects are reduced and more uniform deposition of thentrench-fill material is obtained. The step of forming the plasma typically includes couplingnsource plasma energy into the process chamber at a total power density of at least about 15nWatts/cm 2 . The energy is inductively coupled into the process chamber by coupling a top coilnwith a top portion of the process chamber above the surface of the substrate and coupling anside coil with a side portion of the process chamber generally surrounding the side edge of thensubstrate. The top coil is powered at a top RF power level to produce a top power density andnthe side coil is powered at a side RF power level to produce a side power density. The totalnRF power density is equal to the sum of the top and side power densities. The top power densitynand the side power density desirably have a ratio of at least about 1.5. The high sourcenplasma power density generates a high ion density plasma and produces a more directionalndeposition, and a higher top power density relative to the side power density produces a morenuniform plasma over the substrate, resulting in improved trench fill, particularly for aggressiventrenches having aspect ratios of about 3:1 to 4:1. The process gas typically includes silicon,noxygen, and an inert component having a concentration of less than about 40%, by volume.nIn specific embodiments, the concentration of the inert component is equal to about 0%. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7977199-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100931767-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7871828-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7767561-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7666464-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7292428-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2006074489-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7571698-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7713757-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1593753-A3 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7531469-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7642180-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7700465-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1593753-A2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8058156-B2 |
| priorityDate | 2000-05-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 58.