| abstract |
A direct ion beam deposition method and apparatus are disclosed in which a substrate (120) is disposed within a vacuum chamber (110), a coating of DLC or Si-DLC at a high deposition rate using a Hall-Current ion source (100) is deposited on the substrate, the Hall-Current ion source is operating on carbon-containing or carbon-containing and silicon-containing precursor gases, respectively, and has an anode discharge region (70) which is insulatively sealed to prevent discharge from migrating into the interior of the ion source. |