Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6623826fb005ec2357960fdc6dcc8490 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-0335 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-485 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02222 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02271 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76897 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76834 |
classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-314 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 |
filingDate |
2001-04-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0c99e487da039ff9742ceb5c12544fba http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a265059f330e1ebc1714839fba823106 |
publicationDate |
2004-02-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
EP-1152460-A3 |
titleOfInvention |
Method of etching a contact by RIE using a low temperature carbon rich oxy-nitride layer for improving etching selectivity |
abstract |
Reactive ion etch (RIE) selectivity during etching of anfeature nearby embedded structure is improved by using ansilicon oxynitride layer (8) formed with carbonization throughoutnlayer. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9184088-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8735266-B2 |
priorityDate |
2000-04-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |