| abstract |
An ester compound of the following formula (1) isnprovided.n nR 1 is H, methyl or CH 2 CO 2 R 3 , R 2 is H, methyl or CO 2 R 3 , R 3 is C 1 -C 15 nalkyl, R 4 is branched or cyclic, tertiary C 5 -C 20 alkylngroup, Z is a divalent C 1- C 10 hydrocarbon group, and k is 0nor 1. A resist composition comprising as the base resin anpolymer resulting from the ester compound is sensitive tonhigh-energy radiation, has excellent sensitivity,nresolution, and etching resistance, and is suited fornmicropatterning using electron beams or deep-UV. |