| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a193bbf98a93a588ed793bc48b9a7d3f |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2223-6627
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2223-6622
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-1903
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T29-49123 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5225 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-822
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-092
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-04 |
| filingDate |
2000-08-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2008-05-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_db29e5527c597ffb3940329c8a7d70cc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ffda23b9cee55dd6cd55950103a8aef0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8f5e1edc696f311d24a2b08e18aa9d93
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2e8d5f3a996119cdd6a109dc30cff67b |
| publicationDate |
2008-05-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-1145312-B1 |
| titleOfInvention |
Methods for forming co-axial interconnect lines in a cmos process |
| abstract |
A method of forming a co-axial interconnect line in a dielectric layer is provided. The method includes defining a trench in the dielectric layer and then forming a shield metallization layer within the trench. After forming the shield metallization layer, a conformal oxide layer is deposited within the shield metallization layer. A center conductor is then formed within the conformal oxide layer. Once the center conductor is formed, a fill oxide layer is deposited over the center conductor. A cap metallization layer is then formed over the fill oxide layer and is in contact with the shield metallization layer. |
| priorityDate |
1999-10-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |