| abstract |
A method of improving the electrical properties of highndielectric constant films by depositing an initial film and implantingnoxygen ions to modify the film by decreasing the oxygen deficiency of thenfilm while reducing or eliminating formation of an interfacial siliconndioxide layer. An initial high dielectric constant material is depositednover a silicon substrate by means of CVD, reactive sputtering ornevaporation. Oxygen ions are preferably implanted using plasma ionnimmersion (PIII), although other methods are also provided. Followingnimplantation the substrate is annealed to condition the high dielectricnconstant film. |