| abstract |
The present invention relates to a semiconductorndevice manufacturing method for forming a via hole or ancontact hole in an interlayer insulating film with anlow dielectric constant. The method comprises thensteps of forming an underlying insulating film 2 formednof a nitrogen containing insulating film on a substraten1, forming a porous insulating film 3 on the underlyingninsulating film 2, forming an opening portion 7a in thenunderlying insulating film 2 and the porous insulatingnfilm 3, and forming a nitrogen containing insulatingnfilm 4, 4a on a surface of the porous insulating film 3nand an inner surface of the opening portion 7a bynbringing the surface of the porous insulating film 3nand the inner surface of the opening portion 7a intoncontact with any one gas plasma of an ammonia gas, annitrogen gas, and an oxygen nitride gas. |